Congratulation Song, Seunghyun's for Nano Letters paper acceptance!
Title: Room-Temperature Semiconductor-metal Transition of MoTe2 Thin Film Engineered by Strain
Author(s): Song, Seunghyun; Keum , Donghoon; Cho, Suyeon; Perello, David; Kim, Yunseok; Lee, Young Hee
We demonstrate room-temperature a semiconductor-metal transition in thin film MoTe2 engineered by strain. Reduction of the 2H-1T’ phase transition temperature of MoTe2 to room temperature was realized by introducing a tensile strain of 0.2%. The observed first-order SM transition improved conductance by ~10,000 times and was made possible by an unusually large temperature-stress coefficient, which results from a large volume change and small latent heat. The demonstrated strain-modulation of the phase transition temperature is expected to be compatible with other TMDs enabling the 2D electronics utilizing polymorphism of TMDs along with the established materials.