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Title: Synthesis of Large-Area Multi-layer Hexagonal Boron Nitride for High Material Performance
Authors: Soo Min Kim1, Allen Hsu2, Min Ho Park3, Sang Hoon Chae, Seok Joon Yun, Joo Song Lee, Dae-Hyun Cho, Wenjing Fang, Changgu Lee, Tomás Palacios2, Mildred Dresselhaus, Ki Kang Kim, Young Hee Lee and Jing Kong
Abstract: Although hexagonal boron nitride (h-BN) has been known to be a good candidate for gate insulating materials by minimizing interaction from substrate, further applications to electronic devices with available two-dimensional semiconductors are still limited by the flake size. While monolayer h-BN has been synthesized on Pt or Cu foil using chemical vapor deposition (CVD), multi-layer h-BN is still absent. Here, we use Fe foil and synthesize large-area multi-layer h-BN film by CVD with a borazine precursor. These films reveal strong cathodoluminescence and high mechanical strength (Young’s modulus: 1.16 ± 0.1 TPa), reminiscent of formation of high-quality h-BN. The CVD-grown graphene on multi-layer h-BN film yields a high carrier mobility of ~24,000 cm2V-1s-1 at room temperature, higher than that (~13,000 cm2V-1s-1) with exfoliated h-BN. By placing additional h-BN on SiO2/Si substrate for MoS2 (WSe2) field effect transistor, the doping effect from gate oxide is minimized and furthermore the mobility was improved by 4 (150) times.