Congratulations on Sang Hoon's Nature Materials paper. It is now online.
Let's keep working on.
Title: Transferred wrinkled Al2O3 for highly stretchable and transparent graphene/carbon nanotube transistors
Authors: Sang Hoon Chae, Woo Jong Yu, Jung Jun Bae, Dinh Loc Duong, David Perello, Hye Yun Jeong, Quang Huy Ta, Thuc Hue Ly, Quoc An Vu, Minhee Yun, Xiangfeng Duan, and Young Hee Lee
Abstract: Despite recent progress in producing transparent and bendable thin film transistors using graphene and carbon nanotubes (CNTs)1,2, the development of stretchable devices remains limited either by fragile inorganic oxides or polymer dielectrics with high leakage current3,4. Here we report the fabrication of highly stretchable and transparent field effect transistors combining graphene/SWCNT electrodes and a SWCNT network channel with a geometrically wrinkled inorganic dielectric layer. The wrinkled Al2O3 layer contained effective built-in air gaps with a small gate leakage current of 10-13 A. The resulting devices exhibited excellent on/off ratio of ~105, high mobility of ~40 cm2/Vs, and a low operating voltage of less than 1 V. Importantly, because of the wrinkled dielectric layer, the transistors retained performance under strains as high as 20% without appreciable leakage current increases or physical degradation. No significant performance loss was observed after stretching and releasing the devices for over 1,000 times. The sustainability and performance advances demonstrated here are promising for the adoption of stretchable electronics in a wide variety of future applications.