Congratualtion, Sangwon's paper accepted in APL.
Title: Positive Gate Bias Stress Instability of Carbon Nanotube Thin Film Transistor
Authors: Sang Won Lee, Si Young Lee, Seoung Chu Lim, Young-dong Kwon, Joo-Sun Yoon, Keehan Uh, and Young Hee Lee
Abstract: The effect of gate bias stress on random network carbon nanotube-thin film transistor (CNT-TFT) stability on SiO2 and HfO2 oxides was investigated with different gate bias stresses and times. The CNT-TFTs showed a logarithmic positive threshold voltage shift with time for a positive gate bias stress, following a stretched exponential model. Although the saturated ΔVth was larger on SiO2 than on HfO2, both devices recovered their original characteristics after removal of the stress at room temperature without additional thermal and bias annealing. The CNT-TFTs were found to be more tenable than conventional Si devices against positive gate bias stress.