[2008년]Memory properties of oxide–nitride–oxynitride stack structure using ultra-thin oxynitrided film as tunneling laye
- 정보통신소자연구실
- 조회수435
- 2020-03-10
Memory properties of oxide–nitride–oxynitride stack structure using ultra-thin oxynitrided film as tunneling layer for nonvolatile memory device on glass